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    Journals >Laser & Optoelectronics Progress >Volume 52 >Issue 2 >Page 21602 > Article
    • Laser & Optoelectronics Progress
    • Vol. 52, Issue 2, 21602 (2015)
    Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation
    Lin Tao1,*, Zhang Haoqing1, Sun Hang1, Wang Yonggang2..., Lin Nan3 and Ma Xiaoyu3|Show fewer author(s)
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  • 1[in Chinese]
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    DOI: 103788/lop52.021602 Cite this Article Set citation alerts
    Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 21602 Copy Citation Text show less
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    Article index updated: Mar. 24, 2025
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    Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 21602
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