Quality Optimization of TC4 Alloy Fabrication via Selective Laser Melting

Taiqi Yan; Bingqing Chen; Jiayu Liang; Bingbing Sun; Shaoqing Guo

doi:10.3788/LOP202259.1716006

Journals >Laser & Optoelectronics Progress >Volume 59 >Issue 17 >Page 1716006 > Article

Laser & Optoelectronics Progress
Vol. 59, Issue 17, 1716006 (2022)

Quality Optimization of TC4 Alloy Fabrication via Selective Laser Melting

Taiqi Yan, Bingqing Chen^*, Jiayu Liang, Bingbing Sun, and Shaoqing Guo

Author Affiliations

D Printing Research and Engineering Technology Center, AECC Beijing Institute of Aeronautical Materials, Beijing 100095, China

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DOI: 10.3788/LOP202259.1716006 Cite this Article Set citation alerts

Taiqi Yan, Bingqing Chen, Jiayu Liang, Bingbing Sun, Shaoqing Guo. Quality Optimization of TC4 Alloy Fabrication via Selective Laser Melting[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1716006 Copy Citation Text

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Fig. 1. Morphology of TC4 alloy powder. (a) ×100; (b) ×500

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Fig. 2. Renishaw RenAM 500M selective laser melting equipment

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Fig. 3. Diagram of laser scanning strategy

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Fig. 4. Metallography and relative densities of SLM TC4 alloy under 30 μm layer thickness. (a) Hatch spacing is 0.065 mm; (b) hatch spacing is 0.085 mm

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Fig. 5. Metallography and relative densities of SLM TC4 alloy under 40 μm layer thickness. (a) Hatch spacing is 0.065 mm; (b) hatch spacing is 0.085 mm

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Fig. 6. Microstructure of SLM TC4 alloy. (a) X/Y direction; (b) Z direction

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Fig. 7. Metallographic photos of samples with different heat treatment parameters. (a) 650 ℃/2 h, X/Y direction; (b) 650 ℃/2 h, Z direction; (c) 750 ℃/2 h, X/Y direction; (d) 750 ℃/2 h, Z direction; (e) 850 ℃/2 h, X/Y direction; (f) 850 ℃/2 h, Z direction; (g) 950 ℃/2 h, X/Y direction; (h) 950 ℃/2 h, Z direction

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Fig. 8. Tensile properties of TC4 alloy under different heat treatment parameters. (a) X/Y direction; (b) Z direction

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$Macroscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction$

Fig. 9. Macroscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction

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$Microscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction$

Fig. 10. Microscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction

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Element	Ti	Al	V	O	H	N
Mass fraction /%	balance	6.02	4.02	0.069	0.0042	0.0038
Element	Fe	C	Sn	Cu	Mn	Mo
Mass fraction /%	0.062	0.0035	<0.005	<0.005	<0.005	<0.005

Table 1. Chemical composition of TC4 alloy powder

Parameter types

Layer thickness /μm

Laser power /W

Scanning speed /（mm·s^-1）

Hatch spacing /mm

Value

200

240

280

1500

1875

0.065

0.085

Table 2. Process parameters of selective laser melting

No.	Temperature /℃	Time /h
1	650	2
2	750	2
3	850	2
4	950	2
5	Untreated

Table 3. Heat treatment parameters of SLM TC4 alloy

No.	Laser power /W	Scanning speed /（mm·s^-1）	Hatch spacing /mm	Relative density /%	No.	Laser power /W	Scanning speed /（mm·s^-1）	Hatch spacing /mm	Relative density /%
1	200	1875	0.065	99.973	7	200	1875	0.085	99.970
2	200	1500	0.065	99.987	8	200	1500	0.085	99.991
3	240	1875	0.065	99.990	9	240	1875	0.085	99.981
4	240	1500	0.065	99.935	10	240	1500	0.085	99.982
5	280	1875	0.065	99.961	11	280	1875	0.085	99.990
6	280	1500	0.065	99.920	12	280	1500	0.085	99.969

Table 4. Process parameters and corresponding relative densities of SLM TC4 alloy under 30 μm layer thickness

No.	Laser power /W	Scanning speed /（mm·s^-1）	Hatch spacing /mm	Relative density /%	No.	Laser power /W	Scanning speed /（mm·s^-1）	Hatch spacing /mm	Relative density /%
1	200	1875	0.065	99.992	7	200	1875	0.085	99.985
2	200	1500	0.065	99.993	8	200	1500	0.085	99.980
3	240	1875	0.065	99.990	9	240	1875	0.085	99.980
4	240	1500	0.065	99.988	10	240	1500	0.085	99.979
5	280	1875	0.065	99.979	11	280	1875	0.085	99.991
6	280	1500	0.065	99.970	12	280	1500	0.085	99.983

Table 5. Process parameters and corresponding relative densities of SLM TC4 alloy under 40 μm layer thickness

Heat treatment parameter	X/Y direction			Z direction
Heat treatment parameter	σ_b /MPa	σ_p0.2 /MPa	δ₅ /%	σ_b /MPa	σ_p0.2 /MPa	δ₅ /%
SLM	1149	1064	8.1	1111	1003	5.1
650 ℃/2 h	1031	960	9.5	1004	904	7.6
750 ℃/2 h	999	926	10.7	978	872	11.2
850 ℃/2 h	982	901	15.5	958	845	12.6
950 ℃/2 h	906	819	16.5	894	755	12.9
Ref.［16］	≥895	≥825	≥10	≥895	≥825	≥10