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    Journals >Acta Photonica Sinica >Volume 36 >Issue 1 >Page 34 > Article
    • Acta Photonica Sinica
    • Vol. 36, Issue 1, 34 (2007)
    Temperature Dependence in Preparation of InxGa1-xN/GaN MQWs by MOCVD
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    [in Chinese], [in Chinese]. Temperature Dependence in Preparation of InxGa1-xN/GaN MQWs by MOCVD[J]. Acta Photonica Sinica, 2007, 36(1): 34 Copy Citation Text show less

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    [in Chinese], [in Chinese]. Temperature Dependence in Preparation of InxGa1-xN/GaN MQWs by MOCVD[J]. Acta Photonica Sinica, 2007, 36(1): 34
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