CMOS technology can be used for the fabrication of passive optical functionality, but efficient light emission and high performance light detection still require Groups III~V semiconductors. Various kinds of bonding techniques for the integration of Groups III~V semiconductors onto SOI waveguide circuits are introduced, and they can be divided into inorganic material and organic material bonding in terms of bonding materials used. Emphatically, the integrated coupling methods of InGaAs/InP photodetector on SOI circuitry and the characteristics of different coupling methods are analyzed and compared. A design of an evanescently coupled InGaAs/InP photodetector on SOI circuitry is proposed and its optical properties are simulated using finite-difference time-domain (FDTD) method and using organic material as bonding agent, the absorption efficiency of 95% is obtained. The simulation results show that the photodetector on SOI circuitry with small size exhibits low excess loss and high responsivity, which can meet the requirement of optical interconnect on chips.