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    Journals >Laser & Optoelectronics Progress >Volume 52 >Issue 6 >Page 61607 > Article
    • Laser & Optoelectronics Progress
    • Vol. 52, Issue 6, 61607 (2015)
    Theoretical Study of Electrical and Optical Properties of Ge-Doped 6H-SiC
    Zang Yuan1,*, Cao Lin1, Li Lianbi1, Lin Tao1, and Fei Yang2
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop52.061607 Cite this Article Set citation alerts
    Zang Yuan, Cao Lin, Li Lianbi, Lin Tao, Fei Yang. Theoretical Study of Electrical and Optical Properties of Ge-Doped 6H-SiC[J]. Laser & Optoelectronics Progress, 2015, 52(6): 61607 Copy Citation Text show less
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    Article index updated: Mar. 29, 2025
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    Zang Yuan, Cao Lin, Li Lianbi, Lin Tao, Fei Yang. Theoretical Study of Electrical and Optical Properties of Ge-Doped 6H-SiC[J]. Laser & Optoelectronics Progress, 2015, 52(6): 61607
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