• Laser Journal
  • Vol. 45, Issue 9, 8 (2024)
WANG Zeyuan1,2, WEI Zhipeng1,*, and SUN Lipeng3
Author Affiliations
  • 1State Key Laboratory of High Power Semiconductor Laser of Changchun University of Science and Technology, Changchun 130022, China
  • 2Zhongshan Institute of Changchun University of Science and Technology, Zhongshan Guangdong 528437, China
  • 3He Guang Jing Dian Chongqing Technology Company Limited, Chongqing 400044, China
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    DOI: 10.14016/j.cnki.jgzz.2024.09.008 Cite this Article
    WANG Zeyuan, WEI Zhipeng, SUN Lipeng. Design of semiconductor laser temperature control system for TDLAS[J]. Laser Journal, 2024, 45(9): 8 Copy Citation Text show less

    Abstract

    The working temperature of semiconductor laser in TDLAS (tunable laser absorption spectroscopy) technology directly affects the accuracy of gas concentration detection. The experimental results show that the multilevel integral separation PID control algorithm has advantages in improving the response speed of the temperature control system, improving the accuracy and stability of the system, and reducing the overshoot. The temperature control system has a temperature control accuracy of better than ± 0.03 ℃ in the temperature control range of 10 ~ 40 ℃, and reaches the set temperature within 148 s. The temperature control overshoot is less than 2.5%. The design meets the requirements of TDLAS gas concentration detection and lays a foundation for high-precision detection of gas concentration.
    WANG Zeyuan, WEI Zhipeng, SUN Lipeng. Design of semiconductor laser temperature control system for TDLAS[J]. Laser Journal, 2024, 45(9): 8
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