During the past two decades, GaN-based light-emitting diode has been used as a high-quality light-source. Low-frequency noise as a diagnostic tool for quality control and reliability estimation has been widely accepted and used for semiconductor devices. Understanding the origin of efficiency-droop effect is key to developing the ultimate solid-state light source. Various mechanisms that may cause this effect have been suggested, including carriers’ escape, loses due to dislocations, and the Auger effect. In this study, we investigate the low-frequency noise behaviors of GaN-based blue light-emitting diode with InGaN/GaN multiple quantum wells. The measured currents range from 0.1 mA to 180 mA. According to the characteristics of power spectral density of current noise and the generation-combination mechanism between electrons and holes in the active region of light-emitting diode (LED), we adopt the well-known model of low-frequency noise to fit the relationship between power spectral density of current and frequency, and find that there exists a transition between generation-combination and 1/f noise when the light-emitting diode begins to work. In other words, it can be derived that the low-frequency noise behaviors are dominated by generation-combination noise when the currents are between 0.1 mA and 27 mA; with the current gradually increasing, the origin source of low-frequency noise in blue/violet-light LED will transit to the 1/f noise. Through the analysis of the transport and recombination mechanism of the carriers, and combination with the model of low-frequency noise, we analyze the corner frequency of the generation-recombination noise. The results of this paper provide an effective tool and method to study the conversion of light-emitting diodes.