• Optics and Precision Engineering
  • Vol. 17, Issue 1, 8 (2009)
GU Yuan-yuan1,*, FENG Guang-zhi1, SHAN Xiao-nan1, DENG Xin-li1..., YIN Hong-he12, LIU Yun2, QIN Li2 and WANG Li-jun2|Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    GU Yuan-yuan, FENG Guang-zhi, SHAN Xiao-nan, DENG Xin-li, YIN Hong-he1, LIU Yun, QIN Li, WANG Li-jun. 808 nm and 980 nm high power laser diode stack with wavelength coupling[J]. Optics and Precision Engineering, 2009, 17(1): 8 Copy Citation Text show less

    Abstract

    High-power laser diodes based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As increasing applications of semiconductor lasers in the laser processing, the single laser diode optical power has not satisfied for the actual requirements. In this paper,the improving laser output methods to couple several diode laser beams into one beam or to couple laser beams by an optical fiber to output directly to improve the brightness were researched and the principle and key technique for wavelength coupling in inherent coupling were introduced. The wavelength coupling technology was used to couple two laser beams with wavelength of 808 nm and 980 nm together, the beam splitter cube and optical focusing lens were designed for the experiment.Experimental results show that the overall efficiency is about 70% and spot size about 3 mm×3 mm,which can satisfy the system application requirements for metal cladding and welding directly.
    GU Yuan-yuan, FENG Guang-zhi, SHAN Xiao-nan, DENG Xin-li, YIN Hong-he1, LIU Yun, QIN Li, WANG Li-jun. 808 nm and 980 nm high power laser diode stack with wavelength coupling[J]. Optics and Precision Engineering, 2009, 17(1): 8
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