Xian-Cheng Meng, He Tian, Xia An, Shuo Yuan, Chao Fan, Meng-Jun Wang, Hong-Xing Zheng. Field effect transistor photodetector based on two dimensional SnSe2 [J]. Acta Physica Sinica, 2020, 69(13): 137801-1
- Acta Physica Sinica
- Vol. 69, Issue 13, 137801-1 (2020)
Fig. 1. (a) Diagram of CVT; (b) SnSe2 single crystal; (c) Diagram of graph transfer method.
Fig. 2. (a) XRD spectrum and (b) TEM image of SnSe2.
Fig. 3. XPS spectrum of SnSe2.
Fig. 4. (a) AFM of sample; (b) Optical micro-image of sample.
Fig. 5. Raman spectrum of sample.
Fig. 6. (a) Output characteristic of the field effect transistor based on two-dimensional SnSe2; (b) Transfer characteristic of the field effect transistor.
Fig. 7. I-V curve: (a) 405 nm; (b) 532 nm; (c) 650 nm. Photocurrent curve: (d) 405 nm; (e) 532 nm; (f) 650 nm. Rising edge and falling edge: (g) 405 nm; (h) 532 nm; (i) 650 nm.
Fig. 8. Light response curve: (a) 405 nm; (b) 532 nm; (c) 650 nm. Responsivity and detectivity scatter plot of device: (d) 405 nm; (e) 532 nm; (f)650 nm.
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