An AlAs/Al0.5Ga0.5As coupled distributed Bragg reflector (DBR) with three different reflection center wavelengths is fabricated by the metal-organic chemical vapor deposition system. The transmission electron microscopy and X-ray diffractometer are used to characterize the structure, thickness, and composition. The white light reflectance spectroscopy is used to characterize the intensity and bandwidth of the reflection spectrum. The result shows that coupled DBR has higher reflectance spectrum intensity and wider bandwidth compared to conventional DBR and coupled DBR with two reflection center wavelengths. AlGaInP light emitting diode (LED) with coupled DBR is prepared, and the size is 6.0 mil×6.0 mil (1 mil=0.0254 mm). Under the measuring current of 20 mA, the output optical power is 3.54 mW, the luminous efficiency is 17.26 lm/W, and the external quantum efficiency is 8.77%. The output power of LED is 35.1% higher than that of conventional DBR, and 11.3% higher than that of the coupled DBR with two reflection center wavelengths. It shows that the coupled DBR with three reflection center wavelengths can remarkably increase the light extraction efficiency of an AlGaInP LED.