• Laser Journal
  • Vol. 45, Issue 3, 24 (2024)
WU Chuanqi and XIU Junshan*
Author Affiliations
  • [in Chinese]
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    DOI: 10.14016/j.cnki.jgzz.2024.03.024 Cite this Article
    WU Chuanqi, XIU Junshan. Application progress of laser-induced breakdown spectroscopy in semiconductor material detection[J]. Laser Journal, 2024, 45(3): 24 Copy Citation Text show less

    Abstract

    For the study of semiconductor materials , the element composition and content inside the material is an important factor affecting its performance , although the conventional detection method can detect the composition and content information in the sample , but in this process there are high cost , low efficiency , long time , cumbersome process and other problems. In today's evolving field of analytical technology , there is an urgent need to find a sensing technology that is portable , novel and compatible with today 's materials. Based on the above needs , laser-induced breakdown spectroscopy ( LIBS) technology has gradually entered the public's field of vision , the author briefly intro- duced LIBS technology , on this basis , he focused on the use of LIBS technology to analyze the surface of semiconduc- tor materials microanalysis research and semiconductor material metal oxide nanofilm research progress , introduced the advantages of LIBS technology in these two aspects of detection and the future development of LIBS technology in these aspects.
    WU Chuanqi, XIU Junshan. Application progress of laser-induced breakdown spectroscopy in semiconductor material detection[J]. Laser Journal, 2024, 45(3): 24
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