Indium-tin-oxide (ITO) conductive films provide low resistivity, good light transmittance, and high temperature resistance; they have important applications in the field of optoelectronics. The size of the ITO electrode obtained by the existing process method is generally 10-200 μm, which limits the application of the ITO electrode in the field of micro-nano technique. This work discusses the development of a fabrication method based on the traditional wet etching process and high-precision exposure of ITO glass surface photoresist by maskless lithography. The exposure, development, and etching processes are optimized to obtain an electrode with only 2-μm width. The developed electrode has the advantages of high linearity, no undercut, and small error, thus providing a realistic reference for the application development of ITO electrode in the micro-nano field.