• Optoelectronics Letters
  • Vol. 20, Issue 1, 12 (2024)
Xing CHENG1、2、3, Xinkai FENG2、3, Lei MA2、3, Jiaying CHEN2、3, Huaixi CHEN2、3、*, and Wanguo and LIANG2、3
Author Affiliations
  • 1College of Chemistry, Fuzhou University, Fuzhou 350108, China
  • 2Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350108, China
  • 3Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
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    DOI: 10.1007/s11801-024-3051-3 Cite this Article
    CHENG Xing, FENG Xinkai, MA Lei, CHEN Jiaying, CHEN Huaixi, and LIANG Wanguo. Fabrication and characterization of high-damage resis-tance Zn-diffused MgO: PPLN ridge waveguides[J]. Optoelectronics Letters, 2024, 20(1): 12 Copy Citation Text show less

    Abstract

    This study investigates the fabrication process of Zn-diffused ridge waveguides in periodically poled magne-sium-doped lithium niobate (PPMgO: LN). A controlled variable method is used to study the effects of diffusion tem-perature, diffusion time, ZnO film thickness, and barrier layer thickness on the surface domain depolarization and wa-veguide quality of PPMgO: LN. A special barrier layer is proposed that can automatically lift off from the sample sur-face, which increases the depth of Zn doping and reduces the surface loss of the waveguide. By optimizing the process parameters, we fabricate Zn-diffused PPMgO: LN ridge waveguides with a length of 22.80 mm and a period of 18.0 μm. The above waveguides can make a second harmonic generation (SHG) at 775 nm with an output power of 90.20 mW by a pump power of 741 mW at 1 550 nm. The corresponding conversion efficiency is 3.160%/W?cm2, and the waveguide loss is approximately 0.81 dB/cm. These results demonstrate that high-efficiency devices can be ob-tained through the fabrication process described in this paper.
    CHENG Xing, FENG Xinkai, MA Lei, CHEN Jiaying, CHEN Huaixi, and LIANG Wanguo. Fabrication and characterization of high-damage resis-tance Zn-diffused MgO: PPLN ridge waveguides[J]. Optoelectronics Letters, 2024, 20(1): 12
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