• Laser & Optoelectronics Progress
  • Vol. 61, Issue 5, 0532001 (2024)
Tao Zhou, Mengyao Xu, Sai Zhang, Boqiang Xu, and Sen Cui*
Author Affiliations
  • School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu , China
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    DOI: 10.3788/LOP231003 Cite this Article Set citation alerts
    Tao Zhou, Mengyao Xu, Sai Zhang, Boqiang Xu, Sen Cui. Regulation of Nonadiabaticity-Induced Tunneling Delay Time[J]. Laser & Optoelectronics Progress, 2024, 61(5): 0532001 Copy Citation Text show less

    Abstract

    Recently, tunneling delay time in attosecond experiments leads to discussions about the nonadiabaticity in tunneling process. Under strong field condition, the tunneling delay time usually can be predicted by Keldysh parameter. However, this prediction will fail when we use a few-cycle orthogonal polarized two-color laser field with an envelope. At this time, the initial momentum of photoelectron and the energy consumed in the tunneling process are two important factors that affect the tunneling delay time. Therefore, we find the relationship between these two factors with ionization probability under the above-mentioned laser field. By changing the field intensity ratio and phase difference of the orthogonal polarized two-color lasers, their influence on the tunneling delay time is identified separately, meanwhile, the regulation of tunneling delay time is achieved. Finally, we find that the energy consumed in the tunneling process is a dominant factor influencing the tunneling delay time. These findings contribute to the quantitative analysis of non-adiabatic tunneling delay time and provide new ideas for regulating the ultrafast non-adiabatic tunneling process.