Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0—1) to achieve high efficiency

Zhiyuan TAN; Yuming XUE; Hongli DAI; Luoxin WANG; Xiaofeng HU; Xin BAI

doi:10.1007/s11801-024-2222-6

Journals >Optoelectronics Letters >Volume 20 >Issue 2 >Page 100 > Article

Optoelectronics Letters
Vol. 20, Issue 2, 100 (2024)

Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0—1) to achieve high efficiency

Zhiyuan TAN, Yuming XUE^*, Hongli DAI, Luoxin WANG..., Xiaofeng HU and Xin BAI|Show fewer author(s)

Author Affiliations

Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

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DOI: 10.1007/s11801-024-2222-6 Cite this Article

TAN Zhiyuan, XUE Yuming, DAI Hongli, WANG Luoxin, HU Xiaofeng, BAI Xin. Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0—1) to achieve high efficiency[J]. Optoelectronics Letters, 2024, 20(2): 100 Copy Citation Text

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Abstract

To evaluate the impact of zinc sulfate (ZnSO4) concentration on the structural properties of the films, Cd1-xZnxS thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO4 precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd1-xZnxS films was investigated. To study the impact of zinc doping content on the performance metrics of Cu(In1-xGax)Se2 (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software.

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