• Acta Physica Sinica
  • Vol. 68, Issue 8, 087101-1 (2019)
Mei-Ling Zhang1,2,*, Yu-Hong Chen1, Cai-Rong Zhang1, and Gong-Ping Li2
Author Affiliations
  • 1School of Science, Lanzhou University of Technology, Lanzhou 730050, China
  • 2School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
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    DOI: 10.7498/aps.68.20182238 Cite this Article
    Mei-Ling Zhang, Yu-Hong Chen, Cai-Rong Zhang, Gong-Ping Li. Effect of intrinsic defects and copper impurities co-existing on electromagnetic optical properties of ZnO: First principles study[J]. Acta Physica Sinica, 2019, 68(8): 087101-1 Copy Citation Text show less
    2 × 2 × 2 ZnO supercell (where the red components represent the O atoms, gray represents the Zn atoms)2 × 2 × 2的ZnO的超胞 (红色代替O原子, 蓝紫色代替的是Zn原子)
    Fig. 1. 2 × 2 × 2 ZnO supercell (where the red components represent the O atoms, gray represents the Zn atoms)2 × 2 × 2的ZnO的超胞 (红色代替O原子, 蓝紫色代替的是Zn原子)
    (a) Band Structures of ZnO; (b) PDOS of ZnO(a) ZnO能带结构图; (b) ZnO分波态密度图
    Fig. 2. (a) Band Structures of ZnO; (b) PDOS of ZnO(a) ZnO能带结构图; (b) ZnO分波态密度图
    Structure of crystal cell after optimized: (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi优化后的晶体结构图 (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi
    Fig. 3. Structure of crystal cell after optimized: (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi优化后的晶体结构图 (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi
    Band structures (the dotted line in the graph is the Fermi energy level): (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi能带结构图(图中虚线为费米能级) (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi
    Fig. 4. Band structures (the dotted line in the graph is the Fermi energy level): (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi能带结构图(图中虚线为费米能级) (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi
    PDOS (the dotted line in the graph is the Fermi energy level ): (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi分波态密度(图中虚线为费米能级) (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi
    Fig. 5. PDOS (the dotted line in the graph is the Fermi energy level ): (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi分波态密度(图中虚线为费米能级) (a) CuZn; (b) CuZn-VO; (c) CuZn-VZn; (d) CuZn-Oi
    The imaginary part of the dielectric function of ZnO, CuZn, CuZn-VO, CuZn-VZn, CuZn-OiZnO, CuZn及含不同内在缺陷时(CuZn-VO, CuZn-VZn, CuZn-Oi)介电函数的虚部
    Fig. 6. The imaginary part of the dielectric function of ZnO, CuZn, CuZn-VO, CuZn-VZn, CuZn-OiZnO, CuZn及含不同内在缺陷时(CuZn-VO, CuZn-VZn, CuZn-Oi)介电函数的虚部
    Absorption of CuZn with varying intrinsic defects有内在缺陷CuZn的吸收光谱
    Fig. 7. Absorption of CuZn with varying intrinsic defects 有内在缺陷CuZn的吸收光谱
    Reflectivity of CuZn with varying intrinsic defects有内在缺陷CuZn的反射光谱
    Fig. 8. Reflectivity of CuZn with varying intrinsic defects 有内在缺陷CuZn的反射光谱
    缺陷类型VOVZnOiCuiCuZnCuZn-VOCuZn-VZnCuZn-Oi
    O-rich6.6030.915–0.5485.795–0.4956.3370.422–0.965
    O-poor1.3086.2104.7474.0263.0314.5699.2447.856
    Table 1.

    Formation energy of ZnO and CuZn with intrinsic defects (in eV)

    ZnO和CuZn缺陷的形成能(单位: eV)

    ZnOCuZnCuZn-VOCuZn-VZnCuZn-Oi
    禁带宽度/eV3.3702.5772.4132.5971.885
    光学带隙/eV3.3700.9800.2281.1080.195
    P0.0681.3441.1071.3211.574
    Table 2.

    Band gap and hole concertration P of ZnO model

    ZnO模型的带隙和空穴浓度P

    Mei-Ling Zhang, Yu-Hong Chen, Cai-Rong Zhang, Gong-Ping Li. Effect of intrinsic defects and copper impurities co-existing on electromagnetic optical properties of ZnO: First principles study[J]. Acta Physica Sinica, 2019, 68(8): 087101-1
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