Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Junting Liu; He Yang; Vladislav Khayrudinov; Harri Lipsanen; Hongkun Nie; Kejian Yang; Baitao Zhang; Jingliang He

doi:10.1364/PRJ.430172

Journals >Photonics Research >Volume 9 >Issue 9 >Page 1811 > Article

Photonics Research
Vol. 9, Issue 9, 1811 (2021)

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Junting Liu¹, He Yang^2,4, Vladislav Khayrudinov³, Harri Lipsanen³..., Hongkun Nie^1,*, Kejian Yang¹, Baitao Zhang¹ and Jingliang He¹|Show fewer author(s)

Author Affiliations

¹State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

²Summa Semiconductor Oy, Micronova, Espoo FI-00076, Finland

³Department of Electronics and Nanoengineering, Aalto University, Espoo FI-00076, Finland

⁴e-mail: yhyanghe@gmail.com

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DOI: 10.1364/PRJ.430172 Cite this Article Set citation alerts

Junting Liu, He Yang, Vladislav Khayrudinov, Harri Lipsanen, Hongkun Nie, Kejian Yang, Baitao Zhang, Jingliang He, "Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires," Photonics Res. 9, 1811 (2021) Copy Citation Text

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(a) SEM image of InAsP NWs on quartz substrate. The inset is a higher-resolution SEM image, which shows the NW diameter of ∼50 nm. (b) AFM image of InAsP NWs. (c) Height profiles along the line in the AFM image. (d) EDX measurement of InAsP NWs along the growth direction. (e) Raman spectrum measured using a 532 nm laser. (f) Room-temperature PL spectrum of InAsP NWs.

Fig. 1. (a) SEM image of InAsP NWs on quartz substrate. The inset is a higher-resolution SEM image, which shows the NW diameter of ∼50 nm. (b) AFM image of InAsP NWs. (c) Height profiles along the line in the AFM image. (d) EDX measurement of InAsP NWs along the growth direction. (e) Raman spectrum measured using a 532 nm laser. (f) Room-temperature PL spectrum of InAsP NWs.

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(a) Experimental setup of the nondegenerate pump-probe measurement. (b) Differential transmission of InAsP NWs at different pump pulse energies with a 675 nm probe laser. (c) Relationship between maximum differential transmission and initial photoinduced carrier density. (d) Linear fit to (n0/nt)2−1 as a function of pump-probe delay time and initial photoinduced carrier density.

Fig. 2. (a) Experimental setup of the nondegenerate pump-probe measurement. (b) Differential transmission of InAsP NWs at different pump pulse energies with a 675 nm probe laser. (c) Relationship between maximum differential transmission and initial photoinduced carrier density. (d) Linear fit to (n0/nt)2−1 as a function of pump-probe delay time and initial photoinduced carrier density.

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Fig. 3. Characterization of the NLO properties of the InAsP NWs. OA Z-scan measurements of the InAsP NWs at (a) 532 nm and (c) 1064 nm. CA Z-scan measurements of the InAsP NWs at (b) 532 nm and (d) 1064 nm.

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Fig. 4. Mode-locked laser results based on InAsP NWs. (a) Average output power versus absorbed pump power. (b) The measured pulse width by autocorrelation spectroscopy is ∼426 fs. Inset: corresponding spectrum centered at 1043 nm. (c) Recorded frequency spectrum of the mode-locked laser with an RBW of 10 kHz. Inset: 1 GHz wide-span spectrum. (d) Recorded CWML pulse trains under the maximum pump power.

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Fig. 5. (a)–(c) Nonlinear transmittance of the InAsP NWs at the wavelength of 532 nm with different incident pulse energies. (d)–(f) Nonlinear transmittance of the InAsP NWs at the wavelength of 1064 nm with different incident pulse energies.

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Fig. 6. Experimental setup of the mode-locked solid-state bulk laser based on an InAsP NWs SA.

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Pump Energy Intensity ( $μJ / {cm}^{2}$ )	$τ_{1}$ (ps)	$τ_{2}$ (ps)	$A_{1}$	$A_{2}$
47.7	$1.89 \pm 0.93$	$19.27 \pm 0.89$	0.192	0.803
79.6	$2.53 \pm 1.65$	$11.17 \pm 0.67$	0.145	0.855
127.3	$2.26 \pm 0.65$	$10.79 \pm 0.49$	0.228	0.772
175.1	$1.77 \pm 0.59$	$10.12 \pm 0.55$	0.250	0.750
197.4	$2.65 \pm 1.20$	$7.95 \pm 0.78$	0.252	0.748

Table 1. Fitted Parameters on the Carrier Relaxation Time of InAsP NWs from Eq. (1)

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Materials	Laser Parameters	$β_{eff}$ (cm/GW)	$n_{2}$ ( $m^{2} / W$ )	Reference
Graphene	1030 nm, 1 kHz, 340 fs	$- (19.27 \pm 0.89) \times 10^{- 2}$	$- 13.7 \times 10^{- 16}$	[38]
${MoS}_{2}$	532 nm, 10 kHz, 100 ps	$- 26.2 \pm 8.8$	$- (2.5 \pm 1.2) \times 10^{- 16}$	[38]
${WS}_{2}$	1064 nm, 20 Hz, 25 ps	$- 5.1 \pm 0.26$	$(5.83 \pm 0.18) \times 10^{- 15}$	[39]
BP	800 nm, 10 kHz, 100 fs	$- 1.38 \times 10^{- 2}$	—	[40]
MXene	800 nm, 1 kHz, 95 fs	−0.07	$- 3.47 \times 10^{- 20}$	[41]
InAs NWs	1064 nm, 50 kHz, 100 ns	$- 1 \times 10^{8}$	—	[42]
InAsP NWs	532 nm, 200 kHz, 10 ps	$- (2.07 \pm 0.02) \times 10^{5}$	$(2.39 \pm 0.03) \times 10^{- 13}$	This work
InAsP NWs	1064 nm, 200 kHz, 10 ps	$- (1.44 \pm 0.01) \times 10^{5}$	$(2.73 \pm 0.02) \times 10^{- 13}$	This work