Two types of photodetectors including conventional P+/N-EPI/BN+ photodetector and multi-finger P+/N-EPI/BN+ photodetector were implemented in a standard 0.5 μm Biplor, CMOS and DMOS process with different sizes. The performance and parameter of photodetectors were simulated and optimized. Results of the characteristics of photodetectors simulations and tests were presented, which showed that the multi-finger structure P+/N-EPI/BN+ photodetector can improve the responsibility at 650 nm and decrease the junction capacitance. The large-area multi-finger structure P+/N-EPI/BN+ photodetector was chosen for the monolithic integration with a trans-impedance amplifier and a preamplifier. A proposed monolithic optoelectronic integrated receiver was fabricated in 0.5 μm Biplor, CMOS and DMOS technology for 650 nm plastic optical fiber communication. The measurements of the proposed receiver were done. The receiver achieved a sensitivity of -15 dBm with the bit-error-rate of 10－9 at 160 Mb/s pseudo random binary sequence signal for 650 nm input light. A clear eye diagram was demonstrated for 160 Mb/s pseudo random binary sequence signal. These indicate that the proposed photodetector can be employed in the receiver chip of high-speed plastic-optical-fiber-based fast ethernet system for broadband access network application.