Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Lei Han; Yuanbin Gao; Sheng Hang; Chunshuang Chu; Yonghui Zhang; Quan Zheng; Qing Li; Zi-Hui Zhang

doi:10.3788/COL202220.031402

Journals >Chinese Optics Letters >Volume 20 >Issue 3 >Page 031402 > Article

Chinese Optics Letters
Vol. 20, Issue 3, 031402 (2022)

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Lei Han^1,2,3, Yuanbin Gao^1,2,3, Sheng Hang^1,2,3, Chunshuang Chu^1,2,3,*..., Yonghui Zhang^1,2,3, Quan Zheng⁴, Qing Li⁴ and Zi-Hui Zhang^1,2,3,**|Show fewer author(s)

Author Affiliations

¹State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China

²Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

³Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China

⁴Key Engineering Center of Flat-Panel-Display Glass and Equipment, Shijiazhuang 050035, China

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DOI: 10.3788/COL202220.031402 Cite this Article Set citation alerts

Lei Han, Yuanbin Gao, Sheng Hang, Chunshuang Chu, Yonghui Zhang, Quan Zheng, Qing Li, Zi-Hui Zhang, "Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]," Chin. Opt. Lett. 20, 031402 (2022) Copy Citation Text

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