Due to the difference in energy band and mobility of material in the charge transfer layers of the quantum dot light-emitting diode (QLED), the unbalanced charge injection inevitably occurs. In order to fabricate a high-performance QLED with the most balanced charge injection, the interfacial control is commonly used. Combined with the QLED structures, the recent research progress on the QLED interfacial control for anodes, cathodes, and two-phase interfaces is reviewed. The interfacial control mechanisms and the effects of the interfacial control on the QLED performance are discussed. Challenges and trends in the development of QLED are presented.