Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method

Kaour Selma; Benkara Salima; Bouabida Seddik; Rechem Djamil; Hadjeris Lazhar

doi:10.1088/1674-4926/44/3/032801

Journals >Journal of Semiconductors >Volume 44 >Issue 3 >Page 032801 > Article

Journal of Semiconductors
Vol. 44, Issue 3, 032801 (2023)

Investigation of UV photosensor properties of Al-doped SnO₂ thin films deposited by sol-gel dip-coating method

Kaour Selma^1,2, Benkara Salima^3,4,*, Bouabida Seddik³, Rechem Djamil^1,3, and Hadjeris Lazhar^1,2

Author Affiliations

¹Laboratory of Materials and Structure of Electromechanical Systems and their Reliability, Oum El Bouaghi University, Algeria

²Faculty of Exact Sciences and Natural and Life Sciences, Oum El Bouaghi University, Algeria

³Electrical Engineering Department, Oum El Bouaghi University, Algeria

⁴Laboratory of Active Components and Materials, Oum El Bouaghi University, Algeria

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DOI: 10.1088/1674-4926/44/3/032801 Cite this Article

Kaour Selma, Benkara Salima, Bouabida Seddik, Rechem Djamil, Hadjeris Lazhar. Investigation of UV photosensor properties of Al-doped SnO₂ thin films deposited by sol-gel dip-coating method[J]. Journal of Semiconductors, 2023, 44(3): 032801 Copy Citation Text

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(Color online) The schematic drawing of pure and Al-doped SnO2 thin films produced with a sol-gel dip coating method.

Fig. 1. (Color online) The schematic drawing of pure and Al-doped SnO₂ thin films produced with a sol-gel dip coating method.

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Fig. 2. (Color online) Experimental setup of UV photo-detection.

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Fig. 3. (Color online) XRD patterns of undoped and Al-doped SnO₂ thin films.

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Fig. 4. (Color online) 3D surface morphologies of SnO₂ thin films with various Al doping concentrations.

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Fig. 5. (Color online) Optical transmittance spectra of undoped and Al-doped SnO₂ thin films.

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Fig. 6. (Color online) Plots

{(α h υ)}^{2}

versus

h υ

of undoped and Al-doped SnO₂ thin films.

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Fig. 7. (Color online) Variation of (a) dark current and (b) photocurrent as a function of applied voltage for undoped and aluminum doped SnO₂ thin films.

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Fig. 8. (Color online) Photoconductivity rise and decay time spectra of undoped and Al-doped SnO₂ thin films.

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Fig. 9. (Color online) A schematic of the photoresponse mechanism and energy band diagram of Al:SnO₂ thin films.

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Fig. 10. (Color online) Rise and decay photoresponse curves of pure and Al-doped SnO₂ thin films.

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Sample	2θ (°)	Β (°)	D (nm)	Strain (10⁻³)	$a$ =b (Å)	c (Å)	RMS (nm)	R_a (nm)	D_a (nm)
SnO₂	26.79	0.71	11.92	3.27	4.700	3.203	5.06	4.25	73.0
3 wt.% Al-SnO₂	26.56	0.74	11.40	3.42	4.742	3.195	2.32	1.76	45.5
5 wt.% Al-SnO₂	26.58	0.99	08.54	4.60	4.738	3.161	2.01	1.67	29.3

Table 0. XRD parameters, crystallite size, strain and RMS of undoped and Al-doped SnO₂ thin films.

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Sample	I_ON (A)	I_OFF (A)	I_ON/I_OFF	t_r (s)	t_d1 (s)	t_d2 (s)	E₁ (eV)	E₂ (eV)	Ref.
SnO₂	1.22 × 10⁻²	7.75 × 10⁻⁵	217.85	28	11.33	73.14	0.598	0.64	This work
3 wt.% Al-SnO₂	3.56 × 10⁻⁴	1.30 × 10⁻⁶	273.84	15	5.64	48.15	0.580	0.63	This work
5 wt.% Al-SnO₂	3.03 × 10⁻⁶	1.95 × 10⁻⁸	155.38	24	5.33	49.94	0.579	0.63	This work
Mg-ZnO films	–	–	8.49	196	14.3	112.1	0.640	0.70	[68]
Cu/LiZnO	9.6 × 10⁻¹¹	1.20 × 10⁻⁷	1250	769	35	222	–	–	[69]
SnO₂films	3.2×10⁻¹¹	1.43 × 10⁻⁹	44	250	506	–	–	–	[39]

Table 0. The values of photocurrent, dark current,I_ON/I_OFF ratio, rise time constant (t_r), decay time constants (t_d1,t_d2) and defect levels energy (trap depth (E₁,E₂)) for undoped and Al-doped SnO₂ thin films.

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