During the fabrication of inertial switches via micro-electroforming， casting layer warping is frequently encountered owing to the low bonding strength at the interface. Such low bonding strength between the micro-electrocasting layer and substrate is expected to reduce the production yield and prolong the production cycle while increasing production costs. To address this problem， in this paper， methods that involve "removing a passivated film using electrolytic activation" and "introducing a Cu transition layer" are proposed from an interface passivated film perspective. To explore the impact of the passivation film on the interface binding strength， the interface binding energies of different passivation film removal models are simulated using the Materials Studio software. The calculation results reveal that the higher the passivation film removal rate， the better the interface binding strength. The interface binding strength increases by 197% after the passivation film is completely removed. To examine the influence of transition metals on the interface binding strength， Cu， Cr， and Ti are used as transition layers to establish a bonding layer system with a stainless-steel substrate and nickel cast layer， and the binding energy of the system is determined. The calculation results reveal that the binding energy between Cu and the substrate， as well as between Cu and the cast layer， is higher. The interfacial bonding strength increases by 81% with the introduction of Cu compared to that without the introduction of the transition metal. Based on the simulation results， electrolytic activation experiments are conducted to remove the passivated film from the substrate surface using electrolytic activation. The experimental results indicate that the interfacial bonding strength of the cast layer in the electrolytic activation zone is significantly higher than that in the non-activated zone. Simultaneously， a similar Cu transition layer experiment is conducted， and it demonstrates that the interface bonding strength of the cast layer is significantly improved after introducing the Cu transition layer. Based on the aforementioned simulation and experimental results， a micro inertial switch with a size of 23 × 20 mm and a total height of 900 μm is fabricated.