GaN-based high-voltage green light-emitting diodes were biased by negative Human-Body-Mode electrostatic discharge (ESD) with -500,-1 000,-2 000,-3 000,-4 000,-5 000 and -6 000 V.The I-V characteristic and luminous flux under different electrostatic shock voltages were comparative analyzed after each shock.The results show that the LED has a soft breakdown which accompanied with apparent increased reverse leakage current and unapparent luminous flux change ,which due to the generation of defect after ESD stressing at -500,-1 000,-2 000,-3 000 and -4 000V;When the device was biased to -5 000 V and -6 000 V,a sharp decrease of luminous flux appears,even decay to 50% of light output than before stressing.And forward voltage and reverse leakage current show a large degree of decrease and increase respectively after ESD shock of -6000V,which is due to the thermal model breakdown at this moment.The thermal model breakdown make temperature rise rapidly and form a melting channel,which disabled the LED eventually.