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    Journals >Optoelectronics Letters >Volume 8 >Issue 3 >Page 229 > Article
    • Optoelectronics Letters
    • Vol. 8, Issue 3, 229 (2012)
    Design of GaAs/AlxGa1-xAs asymmetric quantum wells for THz-wave by difference frequency generation
    Xiao-long CAO1,2,*, Jian-quan YAO1,2, Neng-nian ZHU1,2, and De-gang XU1,2
    Author Affiliations
  • 1Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
  • 2Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072,China
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    DOI: 10.1007/s11801-012-1156-6 Cite this Article
    CAO Xiao-long, YAO Jian-quan, ZHU Neng-nian, XU De-gang. Design of GaAs/AlxGa1-xAs asymmetric quantum wells for THz-wave by difference frequency generation[J]. Optoelectronics Letters, 2012, 8(3): 229 Copy Citation Text show less
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    CAO Xiao-long, YAO Jian-quan, ZHU Neng-nian, XU De-gang. Design of GaAs/AlxGa1-xAs asymmetric quantum wells for THz-wave by difference frequency generation[J]. Optoelectronics Letters, 2012, 8(3): 229
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