Using precisely atomic layer etching technology, surface etching process of Te-doped GaSb surface by nitrogen plasma in the plasma enhanced atomic layer deposition system, which can improve emission intensity. The emission intensity increased by a factor of 4 at room temperature.With low temperature photoluminescence measurement, the peak associated with TeSb donor defects due to Te doping was found, with a peak position of 0.743 eV. In addition, the changing of band edge emission with temperature from 0.796 eV to 0.723 eV was also observed. By comparing the room temperature spectra and low temperature spectra,when the nitrogen plasma etching power was 100 W, the best etching cycle of Te-GaSb was 200 cycles. Moreover, the nitrogen passivation does not changed the emission mechanism of Te-GaSb, but improves the radiative recombination efficiency of the sample.