• Laser & Optoelectronics Progress
  • Vol. 56, Issue 10, 101603 (2019)
Qinglong Meng1,**, Yan Zhang2,*, Bin Zhang3, and Jing Shang1
Author Affiliations
  • 1 Food and Pharmaceutical Engineering Institute, Guiyang University, Guiyang, Guizhou 550005, China
  • 2 School of Electronic and Communication Engineering, Guiyang University, Guiyang, Guizhou 550005, China
  • 3 College of Electronics and Information Engineering, Sichuan University, Chengdu, Sichuan 610065, China
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    DOI: 10.3788/LOP56.101603 Cite this Article Set citation alerts
    Qinglong Meng, Yan Zhang, Bin Zhang, Jing Shang. Characteristics of Optically Tunable Multi-Band Terahertz Metamaterial Absorber[J]. Laser & Optoelectronics Progress, 2019, 56(10): 101603 Copy Citation Text show less
    Structural diagram of metamaterial absorber. (a) Tuning principle; (b) unit cell of absorber; (c) side view of unit cell
    Fig. 1. Structural diagram of metamaterial absorber. (a) Tuning principle; (b) unit cell of absorber; (c) side view of unit cell
    Conductivity distribution in GaAs semiconductor material. (a) Two-dimensional distribution; (b) one-dimensional distribution
    Fig. 2. Conductivity distribution in GaAs semiconductor material. (a) Two-dimensional distribution; (b) one-dimensional distribution
    Variation of conductivity versus pump laser fluence
    Fig. 3. Variation of conductivity versus pump laser fluence
    Absorption spectra of metamaterial absorber composed of only single metallic bar
    Fig. 4. Absorption spectra of metamaterial absorber composed of only single metallic bar
    Absorption spectra of metamaterial absorber composed of four metallic bars with different lengths
    Fig. 5. Absorption spectra of metamaterial absorber composed of four metallic bars with different lengths
    Comparison of absorption spectra of different metamaterial absorbers
    Fig. 6. Comparison of absorption spectra of different metamaterial absorbers
    Electric field distributions of metamaterial absorber at different resonance frequencies. (a) f1=2.96 THz; (b) f2=2.69 THz; (c) f3=2.43 THz; (d) f4=2.15 THz
    Fig. 7. Electric field distributions of metamaterial absorber at different resonance frequencies. (a) f1=2.96 THz; (b) f2=2.69 THz; (c) f3=2.43 THz; (d) f4=2.15 THz
    Normalized absorption spectra of metamaterial absorber as function of conductivity of filling dielectric
    Fig. 8. Normalized absorption spectra of metamaterial absorber as function of conductivity of filling dielectric
    Materialμ /(cm2·V-1·s-1)βm*Das /(cm·s-1)Br /(cm3·s-1)k
    GaAs3.3×10410.064m018.31.6×1055×10-110.068
    Table 1. Parameters of GaAs semiconductor material
    Qinglong Meng, Yan Zhang, Bin Zhang, Jing Shang. Characteristics of Optically Tunable Multi-Band Terahertz Metamaterial Absorber[J]. Laser & Optoelectronics Progress, 2019, 56(10): 101603
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