The blind pixels existing in planner PIN type In0.52Al0.48As/In0.53Ga0.47As/ In0.52Al0.48As short wavelength infrared detector were analyzed with the aid of scanning capacitance microscopy technique. And the simulation of blind pixels by Sentaurus TCAD was also presented. In order to eliminate the blind pixels, the transfer line model chip was fabricated to optimize the ohmic contact of Au electrode on P-In0.52Al0.48As. The result shows that a conductive chanel formed between the P electrode and the N－-In0.52Al0.48As cap layer outside the diffusion region resultes in blind pixel generation. Fourthermore, the special contact resistivity which is 3.52×10－4 Ω·cm－2 of Au on P-In0.52Al0.48As was obatined and the problem of Au flowing occurred in rapid thermal processing was suppressed after optimization, so that the probability of blind pixels generation was reduced.