The preparation methods of GaSb single crystal are introduced, which include the Czochralski (CZ) method, the vertical Bridgman (VB) method, the horizontal Bridgman (HB) method, the vertical directional solidification (VDS) method, and the vertical gradient freeze (VGF) method. Their merits and demerits are also summarized. Research results show that the VB, VDS, and VGF methods are more suitable for the growth of GaSb single crystal. Research progress of the ternary alloy GaInSb crystal growth technology is introduced. The microgravity environment can effectively suppress the component segregation of In in the crystal and improve the uniformity of the crystal. The applications of GaSb single crystal materials in the fabrication of devices are introduced, and the development of GaInSb materials is prospected.