The simulation of the semiconductor 3D device is performed to establish the 3D damage model to study the damage mechanism of the Single Event Effects(SEE) in SiGe Heterojunction Bipolar Transistor(HBT), as well as the key factors influencing the Single Event Effect under the coupling action of different working modes and extreme space environment. The transient current changes of each terminal are analyzed and compared after the ions striking on the device under different conditions. The results show that under different operating voltages, the degree of SEE damage is different in different extreme temperatures and different ion radiation environments, which is related to the ionization of carriers in different environments within the device.