JIA Ren-xu, ZHANG Yu-ming, ZHANG Yi-men, GUO Hui. Calculation of Dislocation Destiny Using X-Ray Diffraction for 4H-SiC Homoepitaxial Layers[J]. Spectroscopy and Spectral Analysis, 2010, 30(7): 1995

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- Spectroscopy and Spectral Analysis
- Vol. 30, Issue 7, 1995 (2010)
Abstract

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