To realize biodetection based on Raman scattering of semiconductor under visible light excitation, the Raman probe was constructed by using MoS2 material, a narrow bandgap semiconductor, to realize high specific recognition of the human IgG molecule. First, MoS2 and WS2 micromaterials were obtained by liquid-phase exfoliation method. The effect of temperature on the intensity of the Raman signal excitated by a 532 nm laser was analyzed through heating and aging treatment. Second, the carboxyl group was introduced to the surface of the MoS2 material by 3-mercaptopropionic acid modification, and a Raman probe was obtained. Finally, the performance of the MoS2 based immunoassay was evaluated by using a sandwich structure of "antibody-analyte-antibody". It was found that the heating and aging treatment at appropriate temperature enhanced the Raman scattering intensity of the transition metal disulfide (70 ℃ is the optimal). The results of control groups show that the Raman intensity of the immunodetection increased and saturated with the concentration of the human IgG. The detection limit is 1 fM. The current procedure realized immunoassays with high sensitivity and high specificity by using the Raman scattering of semiconductor under visible light excitation.