Fig. 1. Schematic diagram of GCS model with dual-charge layer distribution: (a) The anions are dispersed in dielectric; (b) under the action of electric field, the anions and cations begin to move in the opposite direction; (c) the distribution of anions and cations in dielectric in equilibriumGCS模型双电荷层分布示意图　(a) 阴阳离子分散在电介质中; (b) 在外电场作用下, 电介质内部阴阳离子开始向两级移动; (c) 达到平衡后, 电介质内阴阳离子排布情况

Fig. 2. Preparation of GFET with ion-gel film gate离子凝胶栅介的GFET制备过程

Fig. 3. Ion-gel film: (a) Ion-gel film image; (b) molecular formula of [EMIM]TF2N; (c) molecular formula of PVDF离子凝胶膜　(a) 离子凝胶膜呈透明状; (b) [EMIM]TF2N分子式; (c) PVDF分子式

Fig. 4. Schematic diagram of GFET with ion-gel film gate离子凝胶栅介的GFET电学检测示意图

Fig. 5. Roman spectra of graphene on ion-gel. Red line corresponds to the ion-gel film with transferred graphene. Black line corresponds to the ion-gel film without graphene离子凝胶膜表面石墨烯拉曼光谱, 其中红线为转移石墨烯后的离子凝胶膜拉曼曲线, 黑线为未转移石墨烯的离子凝胶膜拉曼曲线

Fig. 6. SEM images of ion-gel film: (a) The ion-gel film without graphene; (b) the ion-gel film with transferred graphene离子凝胶膜表面石墨烯SEM图像　(a) 未转移石墨烯的离子凝胶膜表面; (b) 转移石墨烯后的离子凝胶膜表面

Fig. 7. Band diagram of graphene石墨烯能带示意图

Fig. 8. Electrical characteristic curves of GFET at room temperature: (a) The transfer characteristic curve of GFET with ion-gel film gate; (b) the output characteristic curve of GFET with ion-gel film gate; (c) the transfer characteristic curve of GFET with SiO₂ gate; (d) the output characteristic curve of GFET with SiO₂ gate 室温环境下GFET电学特性曲线　(a)离子凝胶栅介GFET的转移特性曲线; (b)离子凝胶栅介GFET的输出特性曲线; (c) SiO₂栅介GFET的转移特性曲线; (d) SiO₂栅介GFET的输出特性曲线

Fig. 9. Energy level of p-type doped graphenep型掺杂石墨烯能级示意图

Fig. 10. Effect of vacuum on the electrical properties of GFET: (a) Transfer characteristic curve; (b) Dirac point voltage and current switching ratio; (c) transconductance真空对GFET电学特性的影响　(a) 转移特性曲线; (b) 狄拉克点电压和开关比; (c) 跨导

Fig. 11. Effect of temperature on the electrical properties of GFET: (a) Transfer characteristic curve; (b) Dirac point voltage and current switching ratio; (c) transconductance温度对GFET电学特性的影响　(a) 转移特性曲线; (b) 狄拉克点电压和开关比; (c) 跨导