Infrared transparent conductive thin film is a special material that can both transmit light and conduct electricity. It is widely used in solar cells, radiative cooling, infrared detector anti-interference coating, transparent electrode, sensing technology, photoelectric devices and other fields. Bismuth telluride is a semiconductor material with a molecular formula of Bi₂Te₃, which has good conductivity and a band gap width of 0.145 eV at room temperature. Based on the excellent optoelectronic properties of Bi₂Te₃ materials and their significant research value in the field of broadband photodetectors, Bi₂Te₃ is one of the ideal candidate materials in the field of infrared transparent conductive films.The preparation methods of Bi₂Te₃ films usually include pulsed laser deposition, magnetron sputtering, physical vapor transport, vacuum evaporation, molecular-beam epitaxy, electron beam deposition, etc. In this paper, Bi₂Te₃ thin films are deposited on fused silicas substrates and zinc selenide substrate by magnetron sputtering. The structure, composition and morphology of the prepared Bi₂Te₃ thin films are analyzed by diffractometer, X-ray photoelectron spectrometer and cold field emission scanning electron microscope. The optical transmittance, conductivity, carrier mobility and other optoelectronic properties of the films are studied. The test results show that annealing is conducive to the crystallization of the films, and does not change the preferred orientation of the crystals. The crystallinity is excellent when the annealing temperature is 350 ℃, and the crystallinity will become better with the increase of the film thickness. The Fourier transform infrared spectrum test results show that the optical transmittance of Bi₂Te₃ films deposited on fused silicas and zinc selenide substrates decreases with the increase of film thickness and annealing temperature. The optical transmittance of the films deposited on zinc selenide substrates is longer than that of fused silicas, and the optical transmittance is more stable. The hall effect test results indicate that with the increase of film thickness and annealing temperature, the resistivity of Bi₂Te₃ film gradually decreases, and the minimum resistivity of the prepared Bi₂Te₃ film is 1.448×10^-3 Ω·cm, with a mobility of 27.400 cm²·V^-1·s^-1 and a carrier concentration of 1.573×10²⁰ cm^-3. The Bi₂Te₃ thin film deposited on fused silicas substrate has a maximum transmittance of 80% in the 1~5 μm infrared band, with a thickness of 15 nm. After annealing at 200 ℃, the transmittance can reach 60% and the resistivity is 5.663×10^-3 Ω·cm. The maximum transmittance of Bi₂Te₃ thin film with thickness of 15 nm deposited on zinc selenide substrate in 2.5~20 μm infrared band reaches 65%, and after annealing at 200 ℃, the transmittance can reach 60%. At this time, the resistivity of the film is 9.919×10^-3 Ω·cm, with good photoelectric performance.Taking into account the photoelectric performance of the prepared thin film, when the thickness of the Bi₂Te₃ thin film is 15 nm and the annealing temperature is 200 ℃, the film has the excellent photoelectric comprehensive performance. Bi₂Te₃ thin films deposited on fused silicas and zinc selenide substrates have good photoelectric properties, which have potential applications in infrared detectors and anti-interference.