• Optics and Precision Engineering
  • Vol. 17, Issue 4, 695 (2009)
CHEN Yan-chao*, ZHAO Bai-qin, and LI Wei
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    CHEN Yan-chao, ZHAO Bai-qin, LI Wei. High peak power semiconductor laser module for producing nanosecond pulse[J]. Optics and Precision Engineering, 2009, 17(4): 695 Copy Citation Text show less

    Abstract

    A laser module was packaged by a pulse width regulated circuit, a driving circuit,a laser protection circuit and laser chips to use in a pulse semiconductor laser sending system. When a laser pulse width was around several nanoseconds, the pins of packaged lasers would introduce resistances to distort the waveform shape and to reduce the energy coupling into the laser chips. To get a high peak power laser pulse with short pulse width and fast risetime, the structure of the laser chips was improved, and an optoelectronic hybrid integration was used to package the driver and the laser chips together into a module. In this way, the short current pulses could be coupled into laser chips effectively.Analysis and experiments prove that the improved laser module can produce optical pulses with better output parameters. On the same condition, the peak optical power produced by the proposed laser module is 6 times larger than that produced by traditional packaged lasers with the same driving circuit under a pulse width around 4.5 ns.The U-P curve of the laser module was tested at a pulse width around 7 ns,and the result shows that it can obtain a peak optical power of 176 W.
    CHEN Yan-chao, ZHAO Bai-qin, LI Wei. High peak power semiconductor laser module for producing nanosecond pulse[J]. Optics and Precision Engineering, 2009, 17(4): 695
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