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    Journals >Laser & Optoelectronics Progress >Volume 60 >Issue 19 >Page 1919001 > Article
    • Laser & Optoelectronics Progress
    • Vol. 60, Issue 19, 1919001 (2023)
    Ultrafast Third-Order Optical Nonlinearity of ZnO Crystals with Different Crystal Planes and Doping
    Mingkai Wang1,2, Zhengguo Xiao3,*, and Zhongquan Nie1,2,**
    Author Affiliations
  • 1Key Laboratory of Advanced Transducers and Intelligent Control, Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030002, Shanxi , China
  • 2College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030002, Shanxi , China
  • 3Department of Physics and Electronic Engineering, Tongren University, Tongren 554300, Guizhou , China
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    DOI: 10.3788/LOP221587 Cite this Article Set citation alerts
    Mingkai Wang, Zhengguo Xiao, Zhongquan Nie. Ultrafast Third-Order Optical Nonlinearity of ZnO Crystals with Different Crystal Planes and Doping[J]. Laser & Optoelectronics Progress, 2023, 60(19): 1919001 Copy Citation Text show less
    Optical paths of Z-scan experiment. (a) Schematic diagram; (b) linearly polarized light; (c) radially polarized light
    Fig. 1. Optical paths of Z-scan experiment. (a) Schematic diagram; (b) linearly polarized light; (c) radially polarized light
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    ZnO with different crystal planes and Ga∶ZnO[101]. (a) UV-vis absorption spectra; (b) band gap
    Fig. 2. ZnO with different crystal planes and Ga∶ZnO[101]. (a) UV-vis absorption spectra; (b) band gap
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    Open Z-scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
    Fig. 3. Open Z-scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
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    Close Z-scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
    Fig. 4. Close Z-scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
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    Different beam Open Z-Scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
    Fig. 5. Different beam Open Z-Scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
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    Different beam close Z-Scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
    Fig. 6. Different beam close Z-Scan data of ZnO with different crystal planes and Ga∶ZnO. (a) ZnO[101]; (b) ZnO[110]; (c) ZnO[100]; (d) Ga∶ZnO[101]
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    Relationship between β and n2 of four ZnO samples with incident light intensity under the excitation of 330 fs, 532 nm. (a) (c) Linearly polarized light; (b) (d) radially polarized light
    Fig. 7. Relationship between β and n2 of four ZnO samples with incident light intensity under the excitation of 330 fs, 532 nm. (a) (c) Linearly polarized light; (b) (d) radially polarized light
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    SampleLinearly polarized lightRadially polarized light
    β /（m·W-1）n2（m2·W-1）χ（3） /esuβ /（m·W-1）n2（m2·W-1）χ（3） /esu
    ZnO［101］-6.30×10-91.90×10-158.50×10-11-5.28×10-91.50×10-157.12×10-11
    ZnO［110］-6.10×10-91.80×10-158.23×10-11-6.22×10-91.90×10-158.39×10-11
    ZnO［100］-1.46×10-93.60×10-161.96×10-11-1.01×10-92.40×10-161.43×10-11
    Ga∶ZnO［101］-5.90×10-91.75×10-157.96×10-11-5.72×10-91.60×10-157.73×10-11
    Table 1. β、n2、χ(3) of ZnO with different crystal planes and Ga∶ZnO under linearly and radially polarized light, when the peak intensity is 7.62×1013 W/m2
    Abstract
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    Mingkai Wang, Zhengguo Xiao, Zhongquan Nie. Ultrafast Third-Order Optical Nonlinearity of ZnO Crystals with Different Crystal Planes and Doping[J]. Laser & Optoelectronics Progress, 2023, 60(19): 1919001
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