In order to solve the problem of damage to LED chip caused by inductively coupled plasma etching and substrate cutting， and improve the yield of devices， a new process for fabricating GaN-based vertical structure LED is proposed. The auto-split vertical structure LED without substrate cutting is successfully fabricated. In the process of device preparation， chemical mechanical polishing is used to reduce the thickness of n-GaN instead of inductively coupled plasma etching ， which avoids the damage to the side wall and active region of the device caused by inductively coupled plasma etching. The problem of substrate cutting is solved by temporary substrate transfer technology， and a single LED chip can be obtained without substrate cutting. Compared with the regular LED， the electrical characteristics of 300 μm × 300 μm auto-split vertical structure LED are greatly improved. The forward voltage at 20 mA decreases from 3.17 V to 2.88 V， which decreases by 9%； the saturation current increases from 240 mA to 280 mA， increasing by 17%. The influence of electrode shape on the device performance is studied. The electrode shape is changed from disk shape to ring shape， the saturation current of 500 μm × 500 μm auto-split vertical structure led is increased from 450 mA to 490 mA， which is increased by 9%. The performance of auto-split vertical structure LED is expected to be improved by optimizing the electrode structure.