Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Jae Hyeok Lee; Abu Bashar Mohammad Hamidul Islam; Tae Kyoung Kim; Yu-Jung Cha; Joon Seop Kwak

doi:10.1364/PRJ.385249

Journals >Photonics Research >Volume 8 >Issue 6 >Page 1049 > Article

Photonics Research
Vol. 8, Issue 6, 1049 (2020)

Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Jae Hyeok Lee^1,†, Abu Bashar Mohammad Hamidul Islam^1,†, Tae Kyoung Kim, Yu-Jung Cha, and Joon Seop Kwak^*

Author Affiliations

Department of Printed Electronics Engineering, Sunchon National University Jeonnam 540-742, South Korea

show less

DOI: 10.1364/PRJ.385249 Cite this Article Set citation alerts

Jae Hyeok Lee, Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Joon Seop Kwak, "Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height," Photonics Res. 8, 1049 (2020) Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Mar. 16, 2025

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.