In order to confirm the effect of semiconductor photoelectric device integration’s insulating layer on the overall performance in system on chip, the resonator with insulating layer was designed and prepared. By the transmission spectrum measurement, it is demonstrated that depositing Si3N4 thin-film and SiO2 thin-film on the resonator have no effect on the quality factor of the resonator. By further analysis, it is found that after deposition, the optimal coupling gap is between 70 nm and 110 nm. For the resonator with SiO2 thin-film, the extinction ratio is 16.5 dB and 3 dB bandwidth is 0.12 nm at the resonant peak. While for the resonator with Si3N4 thin-film, the extinction ratio is 13.9 dB and the 3 dB bandwidth is 0.18 nm at the resonant peak. The energy efficient coupling and high density integration in the system on chip integration would be achieved by selecting the best insulation material.