The photodetectors based on hyperdoped silicon exhibit advantages including high gain at low voltage, and broadband spectral response ranging from visible to near-infrared wavelengths. In this review, the mechanism of femtosecond laser hyperdoping is introduced, followed by the research progress on hyperdoped silicon photodetectors, especially the discussions on how to enhance device response, suppress dark current, improve lattice quality, and increase carrier mobility. Moreover, photodetectors are introduced for flexible optoelectronic applications. At last, the development prospects of photodetectors based on femtosecond laser hyperdoped silicon are forecasted.