Shaoteng Wu, Lin Zhang, Rongqiao Wan, Hao Zhou, Kwang Hong Lee, Qimiao Chen, Yi-Chiau Huang, Xiao Gong, Chuan Seng Tan, "Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate," Photonics Res. 11, 1606 (2023)
- Photonics Research
- Vol. 11, Issue 10, 1606 (2023)
Fig. 1. (a), (b) TEM and HRTEM images of the GeSn/Ge MQW structure on 12-inch Si substrate. (c), (d) High-resolution XRD 2Theta-Omega curve and asymmetric (224) XRD-RSM of the as-grown sample.
Fig. 2. Band alignments of the GeSn/Ge MQW.
Fig. 3. (a) 3D schematic diagram of the GeSn/Ge MQW LED; (b) top-view microscope image of the fabricated LED; (c) I -V characteristics of the LED; (d) room temperature EL spectrum of the GeSn/Ge LED in comparison with that of Ge LED.
Fig. 4. (a) EL spectra as a function of the injected current; (b) peak position and EL integrated intensity as a function of the current density.
Fig. 5. (a) EL spectra as a function of the temperature for fixed injected current density of ∼ 1900 A / cm 2
Fig. 6. (a) PL spectra as a function of temperature; (b), (c) peak position and PL integrated intensity at temperature from 220 to 460 K.
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20