In this paper, tungsten-nickel co-doped V₂O₅ films were prepared on FTO conductive glass by using sol-gel spin coating and annealing to study their photoelectric and phase transition properties at different temperatures and different bias voltage. The crystal structure, surface morphology and components of tungsten-nickel co-doping V₂O₅ films were tested by XRD, SEM and XPS to analyze the effects of different tungsten-nickel co-doping concentrations on the phase transition photoelectric properties of V₂O₅ films. The results show that when the doping concentrations of tungsten and nickel were respectively 3% and 1.5%, tungsten-nickel co-doped V₂O₅ films had a phase transition temperature of 218.5 ℃, a higher transmittance in the visible light range and the transmittance of 48.83% at 1310 nm wavelength. Comparing with the undoped V₂O₅ films, the optical transmittance and sheet resistance of the co-doped V₂O₅ films increased 10.29% and decreased 30.53%, respectively, and the thermal hysteresis loop width was also narrowed to 15 ℃. It is expected to have better applications in the field of new optoelectronic devices based on their excellent reversible phase transition photoelectric properties.