Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance

Aleksei Almaev; Alexander Tsymbalov; Bogdan Kushnarev; Vladimir Nikolaev; Alexei Pechnikov; Mikhail Scheglov; Andrei Chikiryaka

doi:10.1088/1674-4926/24020001

Journals >Journal of Semiconductors >Volume 45 >Issue 8 >Page 082502 > Article

Journal of Semiconductors
Vol. 45, Issue 8, 082502 (2024)

Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance

Aleksei Almaev^1,2,*, Alexander Tsymbalov¹, Bogdan Kushnarev¹, Vladimir Nikolaev^3,4..., Alexei Pechnikov⁴, Mikhail Scheglov⁴ and Andrei Chikiryaka⁴|Show fewer author(s)

Author Affiliations

¹Laboratory of Metal Oxide Semiconductors, Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, Tomsk 634050, Russia

²Fokon LLC, Kaluga 248035, Russia

³Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Moscow 119049, Russia

⁴Perfect Crystals LLC, Saint Petersburg 194223, Russia

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DOI: 10.1088/1674-4926/24020001 Cite this Article

Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka. Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance[J]. Journal of Semiconductors, 2024, 45(8): 082502 Copy Citation Text

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(Color online) Design of the UV sensitive element based on the α-Ga2O3 film.

Fig. 1. (Color online) Design of the UV sensitive element based on the α-Ga₂O₃ film.

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(Color online) (a) XRD spectrum of the Ga2O3 film grown on the c-plane sapphire. (b) Cross-sectional SEM image of the α-Ga2O3 film on Al2O3. (c) Dependence of α2 on photon energy.

Fig. 2. (Color online) (a) XRD spectrum of the Ga₂O₃ film grown on the c-plane sapphire. (b) Cross-sectional SEM image of the α-Ga₂O₃ film on Al₂O₃. (c) Dependence of α² on photon energy.

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Fig. 3. (Color online) I−V curves of the UVC detectors based on the HVPE grown α-Ga₂O₃ films in dark conditions and under the exposure to irradiation at λ = 254 nm and P = 620 µW/cm².

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Fig. 4. (Color online) Spectral dependencies of photo to dark current ratio (a), responsivity (b), detectivity (c), and external quantum efficiency (d) of the UVC detectors at V = 1 V.

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Fig. 5. (Color online) Dependencies of the photo to dark current ratio (a), responsivity (b), detectivity (c), and external quantum efficiency (d) of the UVC detectors on applied voltage at λ = 254 nm and P = 620 µW/cm².

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Fig. 6. (Color online) Time dependencies of the normalized total current through the UV detector based on the HVPE grown α-Ga₂O₃ film at cyclic exposure (a), (b) and single exposure (c), (d) to irradiation at λ = 254 nm, P = 620 µW/cm² and different operation modes.

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Fig. 7. (Color online) Schematic representation of the different operation modes of SBUVDs based on HVPE grown α-Ga₂O₃ film with Pt contacts, where E_c is the condition band bottom; E_v is the valence band top.

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Materials	Structure	R_λ (mA/W)	τ_r (ms)	Refs.
* The time constants corresponded to fast exponents.
α-Ga₂O₃	MSM	0.13	18^*	This work
κ(ε)-Ga₂O₃	MSM	0.9	100	[32]
α-Ga₂O₃/GaN	HJ	44.98	383^*	[34]
α-Ga₂O₃	PEC	11.34	1510	[35]
α-Ga₂O₃	SBD	2.3 × 10⁻⁴	240	[36]
β-Ga₂O₃/CuGaO₂	HJ	0.025	260^*	[37]
NiO/a-Ga₂O₃	HJ	0.057	340^*	[38]
GaN/Ga₂O₃	HJ	54.43	80^*	[39]
ε-Ga₂O₃/ZnO	HJ	4.12	523	[40]
Pt/Sn_xGa_1−xO/Pt	MSM	4.73 × 10⁻²	600^*	[41]
MLG/β-Ga₂O₃/FTO	HJ	9.2	2	[42]