The application of laser beam induced current(LBIC)for the technology detecting of Mercury-Cadmium-Telluride(HgCdTe)infrared two-color detector was presented.By LBIC test,it ws found that the area of n-type region derived from p-type HgCdTe having been implanted by Boron ion was larger than the area to be implanted,and the precise transversal distribution of this n region was also obtained.At the same time,the transversal distributions of plasma etching induced n-type doping HgCdTe from p-type material among the side wall of etched mesa was obtained,and the relation between the transversal width of this n-type region and the energy of etching plasma was also achieved.