• Laser & Optoelectronics Progress
  • Vol. 59, Issue 23, 2314004 (2022)
Mengzhen Wang1, Yao Wang1, Shiqin Wei1, Fang Wang1,2..., Zhi Quan1 and Yuhuai Liu1,2,3,*|Show fewer author(s)
Author Affiliations
  • 1National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 2Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, Henan, China
  • 3Research Institute of Industrial Technology, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
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    DOI: 10.3788/LOP202259.2314004 Cite this Article Set citation alerts
    Mengzhen Wang, Yao Wang, Shiqin Wei, Fang Wang, Zhi Quan, Yuhuai Liu. Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer[J]. Laser & Optoelectronics Progress, 2022, 59(23): 2314004 Copy Citation Text show less
    Schematic diagram of the cross-section of three DUV-LDs
    Fig. 1. Schematic diagram of the cross-section of three DUV-LDs
    Carrier distributions in the active regions of three DUV-LDs. (a) Hole concentration of the active region after introducing HRL; (b) electron concentration of the active region; (c) hole concentration of the active region; (d) radiative recombination rate of the active region
    Fig. 2. Carrier distributions in the active regions of three DUV-LDs. (a) Hole concentration of the active region after introducing HRL; (b) electron concentration of the active region; (c) hole concentration of the active region; (d) radiative recombination rate of the active region
    Electrical properties of three DUV-LDs. (a) V-I curve; (b) P-I curve
    Fig. 3. Electrical properties of three DUV-LDs. (a) V-I curve; (b) P-I curve
    Photoelectric conversion efficiency of three DUV-LDs
    Fig. 4. Photoelectric conversion efficiency of three DUV-LDs
    Five-step HRL at different positions in DUV-LD
    Fig. 5. Five-step HRL at different positions in DUV-LD
    Band diagram of five-stepped HRL at different positions in DUV-LD. (a) Position 1; (b) position 2; (c) position 3
    Fig. 6. Band diagram of five-stepped HRL at different positions in DUV-LD. (a) Position 1; (b) position 2; (c) position 3
    Carrier distribution in active region of five-step HRL at different positions in DUV-LD. (a) Electron concentration distribution; (b) maximum electron/hole concentration in quantum well; (c) radiative recombination rate
    Fig. 7. Carrier distribution in active region of five-step HRL at different positions in DUV-LD. (a) Electron concentration distribution; (b) maximum electron/hole concentration in quantum well; (c) radiative recombination rate
    Electrical characteristics of five-step HRL at different positions in DUV-LD
    Fig. 8. Electrical characteristics of five-step HRL at different positions in DUV-LD
    Mengzhen Wang, Yao Wang, Shiqin Wei, Fang Wang, Zhi Quan, Yuhuai Liu. Performance Optimization of Deep-Ultraviolet Laser Diodes Based on Hole Reservoir Layer[J]. Laser & Optoelectronics Progress, 2022, 59(23): 2314004
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