Interband cascade lasers with short electron injector

Chao Ning; Tian Yu; Shuman Liu; Jinchuan Zhang; Lijun Wang; Junqi Liu; Ning Zhuo; Shenqiang Zhai; Yuan Li; Fengqi Liu

doi:10.3788/COL202220.022501

Journals >Chinese Optics Letters >Volume 20 >Issue 2 >Page 022501 > Article

Chinese Optics Letters
Vol. 20, Issue 2, 022501 (2022)

Interband cascade lasers with short electron injector

Chao Ning^1,2, Tian Yu^1,2, Shuman Liu^1,2,*, Jinchuan Zhang^1,2..., Lijun Wang^1,2, Junqi Liu^1,2, Ning Zhuo^1,2,**, Shenqiang Zhai^1,2, Yuan Li^1,2 and Fengqi Liu^1,2,3|Show fewer author(s)

Author Affiliations

¹Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Academy of Quantum Information Sciences, Beijing 100193, China

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DOI: 10.3788/COL202220.022501 Cite this Article Set citation alerts

Chao Ning, Tian Yu, Shuman Liu, Jinchuan Zhang, Lijun Wang, Junqi Liu, Ning Zhuo, Shenqiang Zhai, Yuan Li, Fengqi Liu, "Interband cascade lasers with short electron injector," Chin. Opt. Lett. 20, 022501 (2022) Copy Citation Text

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Abstract

We demonstrate GaSb-based interband cascade lasers (ICLs) emitting around 3.65 µm, which exhibit a room-temperature continuous-wave (CW) output power above 100 mW. Cavity-length analysis showed that the laser structure has a low internal loss of

3 {cm}^{- 1}

while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C, the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.

Keywords

interband cascade lasers mid-infrared quantum well semiconductor lasers