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    Journals >Acta Photonica Sinica >Volume 32 >Issue 8 >Page 977 > Article
    • Acta Photonica Sinica
    • Vol. 32, Issue 8, 977 (2003)
    The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects
    1,2, 1, 1, and 1
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects[J]. Acta Photonica Sinica, 2003, 32(8): 977 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Relation of Yellow Band Luminescence of Undoped GaN Epitaxial Grown on AlN/6H-SiC(0001) Substrate with Thin Film Defects[J]. Acta Photonica Sinica, 2003, 32(8): 977
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