Recently, the III- V on silicon bonded lasers, as a fundamental component of complementary metal oxide semiconductor (CMOS) compatible silicon optical interconnects, have attracted great attention and been extensively studied. The metallic structure can enhance the optical confinement inside the laser resonator, increase the reflectivity at the boundary and give a large fabrication tolerance. Thus a small-volume low-powerconsumption laser can be achieved with the metallic confinement structure. The principle and experimental scheme for the III-V on silicon adhesively bonded semiconductor lasers with metal confinement are introduced, and the lasing characteristics are analyzed. Further development of hybrid laser may lay the foundation for the low-power-consumption high-bandwidth optical interconnects.