In order to further improve the performance of blue laser, the influence of the combination of p-type waveguide layer and active region on the performance of InGaN-based edge-emitting blue laser is studied in detail based on the experimental sample structure. Simulation software named PICS3D is used to simulate these blue lasers and to compare their electrical and optical characteristics including light output power-current-voltage characteristic curve, band structures, carrier current density distributions, and stimulated recombination rates. The results show that by using the novel structure of In-composition graded p-type waveguide and the first two quantum barriers, and the last quantum barrier uses the AlGaN material, the blue laser diode can restrain the electron leakage, increase the hole injection and stimulated recombination rate, and thus improve the performance of blue laser diodes. Under 1.5 A injection current, the light output power can reach 2.69 W, which is 47.8% higher than the standard structure.