Aims and Scope

The Journal of Advanced Dielectrics (JAD) is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics:

• Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches).

• Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal).

• Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect).

• Ferroelectric materials and devices (single crystals and ceramics).

• Thin/thick films and devices (ferroelectric memory devices, capacitors).

• Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics).

• Pyroelectric materials and devices

• Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials).

• Electrooptic and photonic materials.

• Energy harvesting and storage materials (polymer, composite, super-capacitor).

• Phase transitions and structural characterizations.

• Microwave and milimeterwave dielectrics.

• Nanostructure, size effects and characterizations.

• Engineering dielectrics for high voltage applications (insulation, electrical breakdown).

• Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics).

JAD was sponsored by International Center for Dielectric Research (ICDR), Xi'an Jiaotong University, China.

Editor-in-Chief

Xi Yao, Xi'an Jiaotong University, China

Editors

Yongxiang Li, Shanghai Institute of Ceramics, Chinese Academy of Sciences, China

Cewen Nan, Tsinghua University, China

Ahmad Safari, Rutgers University, USA

Vladimir Ya. Shur, Ural Federal University, Russia

Takaaki Tsurumi, Tokyo Institute of Technology, Japan

Xiaoyong Wei, Xi'an Jiaotong University, China

Zuo-Guang Ye, Simon Fraser University, Canada

Board Members

Miguel Algueró, Instituto de Ciencia de Materiales de Madrid (ICMM), Spain

Jüras Banys, Vilnius University, Lithuania

Aimé Peláiz Barranco, Universidad de La Habana, Cuba

Nazanin Bassiri-Gharb, Georgia Institute of Technology, USA

Alexei A. Bokov, Simon Fraser University, Canada

David Cann, Oregon State University, USA

Long-Qing Chen, The Pennsylvania State University, USA

Zhongyang Cheng, Auburn University, USA

Zhi-Min Dang, Tsinghua University, China

Catherine Elissalde, Institute of Condensed Matter Chemistry of Bordeaux (ICMCB) - CNRS, France

Hiroshi Funakubo, Tokyo Institute of Technology, Japan

Norifumi Fujimura, Osaka Prefecture University, Japan

Reimund Gerhard, University of Potsdam, Germany

Xihong Hao, Inner Mongolia University of Science and Technology, China

Jiri Hlinka, Institute of Physics, The Czech Academy of Sciences

Li Jin, Xi'an Jiaotong University, China

Andrei Kholkin, University of Aveiro, Portugal

Eung Soo Kim, Kyonggi University, Korea

Jae-Hyeon Ko, Hallym University, Korea

Ling Bing Kong, Shenzhen Technology University, China

Jurij Koruza, Technical University of Darmstadt, Germany

Yoshihiro Kuroiwa, Hiroshima University, Japan

Fei Li, Xi’an Jiaotong University, China

Guo-Rong Li, Shanghai Institute of Ceramics, Chinese Academy of Sciences

Jiangyu Li, Southern University of Science and Technology, China

Yan-Rong Li, University of Electronics Science and Technology of China, China

Hanxing Liu, Wuhan University of Technology, China

Ming Liu, Xi'an Jiaotong University, China

Yun Liu, The Australian National University, Australia

Zhifu Liu, Shanghai Institute of Ceramics, Chinese Academy of Sciences

Yuji Noguchi, The University of Tokyo, Japan

Ivan A. Parinov, Southern Federal University, Russia

Yimnirun Rattikorn, Suranaree University of Technology, Thailand

Mike Reece, University of London, UK

Krystian Roleder, University of Silesia in Katowice, Poland

Wei Ren, Xi'an Jiaotong University, China

Tadej Rojac, Jo?ef Stefan Institute, Slovenia

Xiaoli Tan, Iowa State University, USA

R. P. Tandon, University of Delhi, India

Chunlei Wang, Shandong University, China

Ke Wang, Tsinghua University, China

Di Wu, Nanjing University, China

Jiagang Wu, Sichuan University, China

Yugong Wu, Tianjin University, China

Kui Yao, Institute of Materials Research and Engineering, A

STAR (Agency for Science, Technology and Research), Singapore

Yumeng You, Southeast University, China

Jiwei Zhai, Tongji University, China

Haibo Zhang, Huazhong University of Science and Technology, China

Shujun Zhang, University of Wollongong, Australia

Di Zhou, Xi'an Jiaotong University, China

Jianguo Zhu, Sichuan University, China

Managing Editors

Nan Zhang, Xi'an Jiaotong University, China

Jihui Gong, Xi'an Jiaotong University, China

Editorial Team

Xiangyu Gao, Xi'an Jiaotong University, China

Jingrui Li, Xi'an Jiaotong University, China

Xingtian Yin, Xi'an Jiaotong University, China

Jie Zhang, Xi'an Jiaotong University, China

JAD Editorial Office

Electronic Materials Research Laboratory (EMRL)

Xi'an Jiaotong University, Xi'an 710049, P.R. China

Email: jad@xjtu.edu.cn

Tel: +86-29-83395679

Fax: +86-29-83395679