• Nano-Micro Letters
  • Vol. 16, Issue 1, 019 (2024)
Guannan Yang, Guohua Dong*, Butong Zhang, Xu Xu..., Yanan Zhao, Zhongqiang Hu** and Ming Liu|Show fewer author(s)
Author Affiliations
  • State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
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    DOI: 10.1007/s40820-023-01233-z Cite this Article
    Guannan Yang, Guohua Dong, Butong Zhang, Xu Xu, Yanan Zhao, Zhongqiang Hu, Ming Liu. Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process[J]. Nano-Micro Letters, 2024, 16(1): 019 Copy Citation Text show less

    Abstract

    Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm-1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.
    Guannan Yang, Guohua Dong, Butong Zhang, Xu Xu, Yanan Zhao, Zhongqiang Hu, Ming Liu. Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process[J]. Nano-Micro Letters, 2024, 16(1): 019
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